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AKTU Modeling of Field-effect Nano Devices (BOE097) Syllabus PDF – B.Tech Open Elective
Modeling of Field-effect Nano Devices BOE097
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Official AKTU syllabus of Modeling of Field-effect Nano Devices (BOE097) for B.Tech Open Elective – 3 credits, L-T-P 3-0-0. Read the unit-wise course content, course outcomes, evaluation pattern and recommended books online, or download the PDF.
Syllabus — Modeling of Field-effect Nano Devices
Download PDFBOE097 · 3 credits · L-T-P 3-0-0
Course Content
L-T-P: 3-1-0
| Unit | Topic | Proposed Lecture |
|---|---|---|
| I | MOSFET scaling, short channel effects - channel engineering - source/drain engineering - high k dielectric - copper interconnects - strain engineering, SOI MOSFET, multigate transistors – single gate – double gate – triple gate – surround gate, quantum effects – volume inversion – mobility – threshold voltage – inter subband scattering, multigate technology – mobility – gate stack. | 08 |
| II | MOS Electrostatics – 1D – 2D MOS Electrostatics, MOSFET CurrentVoltage Characteristics – CMOS Technology – Ultimate limits, double gate MOS system – gate voltage effect - semiconductor thickness effect – asymmetry effect – oxide thickness effect – electron tunnel current – two dimensional confinement, scattering – mobility. | 08 |
| III | Silicon nanowire MOSFETs – Evaluvation of I-V characteristics – The I-V characteristics for nondegenerate carrier statistics – The I-V characteristics for degenerate carrier statistics – Carbon nanotube – Band structure of carbon nanotube – Band structure of graphene – Physical structure of nanotube – Band structure of nanotube – Carbon nanotube FETs – Carbon nanotube MOSFETs – Schottky barrier carbon nanotube FETs – Electronic conduction in molecules – General model for ballistic nano transistors – MOSFETs with 0D, 1D, and 2D channels – Molecular transistors – Single electron charging – Single electron transistors. | 08 |
| IV | Radiation effects in SOI MOSFETs, total ionizing dose effects – single-gate SOI – multi-gate devices, single event effect, scaling effects. | 08 |
| V | Digital circuits – impact of device performance on digital circuits – leakage performance trade off – multi VT devices and circuits – SRAM design, analog circuit design – transconductance - intrinsic gain – flicker noise – self heating –band gap voltage reference – operational amplifier – comparator designs, mixed signal – successive approximation DAC, RF circuits. | 08 |
Text Books
- J P Colinge, "FINFETs and other multi-gate transistors", Springer – Series on integrated circuits and systems, 2008
- Mark Lundstrom, Jing Guo, "Nanoscale Transistors: Device Physics, Modeling and Simulation", Springer, 2006
- M S Lundstorm, "Fundamentals of Carrier Transport", 2nd Ed., Cambridge University Press, Cambridge UK, 2000.
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