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AKTU VLSI Technology (BECZ053) Syllabus PDF – B.Tech 3rd Year
VLSI Technology BECZ053
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Official AKTU syllabus of VLSI Technology (BECZ053) for B.Tech 3rd Year – 3 credits, L-T-P 3-0-0. Read the unit-wise course content, course outcomes, evaluation pattern and recommended books online, or download the PDF.
Syllabus — VLSI Technology
Download PDFBECZ053 · 3 credits · L-T-P 3-0-0
Course Outcomes
At the end of course, the student will be able to:
| CO 1 | Interpret the basics of crystal growth, wafer preparation and wafer cleaning. | K K 3, 5 |
| CO 2 | Evaluate the process of Epitaxy and oxidation. | K , K 2 3 |
| CO 3 | Differentiate the lithography, etching and deposition process. | K , K 3 4 |
| CO 4 | Analyze the process of diffusion and ion implantation. | K4, K 5 |
| CO 5 | Express the basic process involved in metallization and packaging. | K , K 2 3 |
Course Content
L-T-P: 3-0-0
| Unit | Topic | Proposed Lecture |
|---|---|---|
| I | Introduction To IC Technology: SSI, MSI, LSI, VLSI Integrated Circuits. Crystal Growth and Wafer Preparation: Electronic Grade Silicon, Czochralski Crystal Growth, Silicon Shaping, Processing Considerations. Wafer Cleaning Technology - Basic Concepts, Wet cleaning, Dry cleaning | 08 |
| II | Epitaxy: Vapor-Phase Epitaxy, Molecular Beam Epitaxy, Silicon on Insulators, Epitaxial Evaluation. Oxidation: Growth Kinetics, Thin Oxides, Oxidation Techniques and Systems, Oxides Properties. | 08 |
| III | Lithography: Optical Lithography, Electron beam lithography, Photo masks, Wet Chemical Etching. Dielectric and Polysilicon Film Deposition: Deposition Processes of Polysilicon, Silicon Dioxide, Silicon Nitride. | 08 |
| IV | Diffusion: Models of diffusion in solids, Fick’s 1-Dimensional diffusion equation, Diffusion of Impurities in Silicon and Silicon Dioxide, Diffusion Equations, Diffusion Profiles, Diffusion Furnace, Solid, Liquid and Gaseous Sources, Ion-Implantation: Ion-Implantation Technique, Range Theory, Implantation Equipment. | 08 |
| V | Metallization: Metallization Application, Metallization Choices, Physical Vapor Deposition, Vacuum Deposition, Sputtering Apparatus. Packaging of VLSI devices: Package Types, Packaging Design Consideration, VLSI Assembly Technologies, Package Fabrication Technologies, CMOS fabrication steps. | 08 |
Content beyond the Course:
Topics such as IC fabrication process steps including lithography, thin film deposition (silicondioxide, silicon nitride, polysilicon), diffusion, ion-implantation, metallization, and CMOS process integration, as covered in this syllabus, can be implemented and verified using“Siemens EDA (Calibre)/ Cadence/ Synopsys or similar relevant software tools”.
Text Books
- S. M. Sze, "VLSI Technology", McGraw Hill Publication, 2nd Edition 2017
- S.K. Ghandhi, "VLSI Fabrication Principles", Willy-India Pvt. Ltd, 2008
Reference Books
- J. D. Plummer, M. D. Deal and Peter B. Griffin, “Silicon VLSI Technology:Fundamentals, Practice and Modeling", Pearson Education Publication, 2009
- Stephen A. Campbell, "Fabrication Engineering at the Micro and Nano scale", OxfordUniversity Press, 2013
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