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AKTU Electronic Devices (BEC301) Syllabus PDF – B.Tech 2nd Year

Electronic Devices BEC301

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  • Semester 3
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Official AKTU syllabus of Electronic Devices (BEC301) for B.Tech 2nd Year – 4 credits, L-T-P 3-1-0. Read the unit-wise course content, course outcomes, evaluation pattern and recommended books online, or download the PDF.

Syllabus — Electronic Devices

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BEC301 · 4 credits · L-T-P 3-1-0

UnitTopicsLecture s
IIntroduction to semiconductor physics: Review of quantum mechanics, electrons in periodic lattices, E-k diagrams, Effective Mass.8
IIEnergy bands in intrinsic and extrinsic silicon, carrier transport, diffusion current, drift current, mobility and resistivity, sheet resistance, Generation and recombination of carriers, Poisson and continuity equation.8
IIIP-N junction characteristics, I-V characteristics, and small signal switching models, Avalanche breakdown, Zener diode, Schottky diode, LED, photodiode and solar cell.8
IVBipolar Junction Transistor, various configurations (such as CE, CB & CC) and their features I-V characteristics, DC biasing schemes for BJT, bias stability, Ebers-Moll model.8
VField Effect Transistor, configurations (such as CS, CD & CG), DC biasing schemes, MOSFET, I-V characteristics, MOS capacitor, C-V characteristics.8

Text/Reference Books:

  1. G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson, 2014.
  2. D. Neamen , D. Biswas, "Semiconductor Physics and Devices," McGraw-Hill Education.
  3. S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
  4. C.T. Sah, “Fundamentals of Solid State Electronics,” World Scientific Publishing Co. Inc, 1991.
  5. Y. Tsividis and M. Colin, “Operation and Modeling of the MOS Transistor,” Oxford univ. press, 2011.
  6. Muhammad H. Rashid, “Electronic Devices and Circuits,” Cengage publication, 2014.

Course Outcomes

  1. Understand the principles of semiconductor Physics.
  2. Understand the carrier transport in semiconductors.
  3. Analyze and find application of special purpose diodes.
  4. Understand the working principle and design of Bipolar Junction Transistor.
  5. Realize the mathematical models of MOS transistors

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